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data and specifications subject to change without notice 1 201401 13 v1. 0 advanced power electronics corp. ape 8935 ultra - low on resistance, 6 a load switch with controlled turn - on features integrated 6 a s ingle c hannel l oad s witch input voltage range: 0.8v to 5.5 v ultra - low on - resistance r on = 4. 5 m (vbais=5v, vin=1.05v) low threshold control input quick output discharge transistor halogen free product application s telecom systems industrial systems consumer electronics notebooks / netbooks description the ape8935 is a small, ultra - low r on load switch with controlled turn on. it contain s one n - channel mosfet that can operate over an input voltage range of 0.8v to 5.5 v and support maximum continuous current up to 6 a. the switch is controlled by an on/off input ( en ), which is capable of interfacing directly with low - voltage control signals. additional features include a 33 0 on - chip load resistor is added for output quick discharge w hen switch is turned off . the ape8935 is available in 8 - pin dfn 3x3 - 8l package with smallest components. typical application gnd vin ape 8935 en vout c out 0 . 1 uf c in 1 uf vbias + 5 v / + 3 . 3 v v in v out
2 advanced power electronics corp. ape 8935 ordering / package information package type gn 3 : dfn 3 x 3 - 8 l ape 8935 x dfn 3 x 3 - 8 l top view exposed pad 1 2 3 4 5 6 7 8 vin vbias en vin vout vout vin vout gnd absolute maximum ratings (at t a =25 c ) v in - 0.3v to 6 v vout vin+0. 3v en - 0.3v to 6v vbias - 0.3 to 6 v i max 6a storage temperature range (t st ) - 65 to +150c junction temperature (t j ) 150 c lead temperature (soldering, 10sec.) 260 c thermal resistance from junction to ambient (r ja ) dfn 3x3 - 8l 43 c/w recommended operating conditions vin 0.8v to 5.5v v b i as 2.5 v to 5.5 v ( vbias R vin ) vout . v in cin R 0.1 uf junction temperature (t j ) 125 c operating temperature range - 40c to 85c
3 advanced power electronics corp. ape 8935 electrical specifications (v in = 0.8 v to 5.5 v, v bias = 5 v , c in =1uf, c out =0.1uf , t a = 25 c, unless otherwise specified) parameter sym test condition min typ max unit quiescent current i bias v bias = v en =5v , v in = 1.05v, i out = 0a 30 50 ua v bias = v en =5v , v in = 1.5v, i out = 0a 30 50 ua shutdown current i sd v e n =gnd 1 ua on resistance (note 1 ) r on v bias = v en =5v , v in = 1.05v, i out = 200ma t a =25 c 4.5 5 m - 40~85 c (note1) 5.5 6 v bias = v en =5v , v in = 1.5v, i out = 200ma t a =25 c 4.5 5 m - 40~85 c (note1) 5.5 6 output pull - down resistance r opd v i n = 5v , v en = 0v 330 400 en input leakage current i en v en = 5v or gnd 1 ua en threshold v ih on 1.3 v v il off 0.5 v note 1 : m ake sure v bais R v in f or optim um r on performance .
4 advanced power electronics corp. ape 8935 switching specifications gnd vin ape 8935 en vout c out 0 . 1 uf c in 1 uf vbias v bias v in v out r l v en fig.1 test circuit t d - on t r 10 % 90 % t f 90 % 10 % v en v out 50 % t o n 1 % t o f f 50 % fig.2 on/off waveforms parameter sym test condition min typ max unit turn - on time t on v bias =v en =5v , r l =10 ? v in = 1.05 v 905 us v in =1.5 v 940 us turn - off time t off v bias =v en =5v , r l =10 ? v in =1.05v 5.4 us v in =1.5v 5.2 us vout rise time t r v bias =v en =5v , r l =10 ? v in =1.05v 308 440 572 us v in =1.5v 381 545 708 us vout fall time t f v bias =v en =5v , r l =10 ? v in =1.05v 1.7 us v in =1.5v 1.8 us vout turn - on delay time t d - on v bias =v en =5v , r l =10 ? v in =1.05v 388 555 721 us v in =1.5v 381 545 708 us
5 advanced power electronics corp. ape 8935 switching specifications (continued) parameter sym test condition min typ max unit turn - on time t on v bias =v en =5v , i out =6a v in =1.05v 1345 us v in =1.5v 1480 us turn - off time t off v bias =v en =5v , i out =6a v in =1.05v 4.8 us v in =1.5v 4.8 us vout rise time t r v bias =v en =5v , i out =6a v in =1.05v 602 860 1118 us v in =1.5v 616 880 1144 us vout fall time t f v bias =v en =5v , i out =6a v in =1.05v 0.5 us v in =1.5v 0.7 us vout turn - on delay time t d - on v bias =v en =5v , i out =6a v in =1.05v 497 710 923 us v in =1.5v 495 708 920 us
6 advanced power electronics corp. ape 8935 pin description s pin no. pin symbol pin description 1, 2 vin input power supply 3 vbias bias voltage 4 en switch control input, active high. do not leave floating . 5 gnd ground 6, 7, 8 vout switch output exposed pad vin input power supply block diagram oscillator control logic en vin vout gnd output discharge vbias charge pump
7 advanced power electronics corp. ape 8935 typical performance characteristics condition: vbias= ven=5v, rl=10 ? , cin=1uf, cout=0.1uf, c h1: en, ch2:vout, ch 4 :i in fig.1 waveform for t d - on , vin= 1.05 v fig. 2 waveform for t d - on , vin=1.5v fig.3 waveform for t on and t r , vin= 1.05 v fig. 4 waveform for t on and t r , vin= 1.5 v fig.5 waveform for t off and t f , vin= 1.05 v fig. 6 waveform for t off and t f , vin= 1 . 5 v
8 advanced power electronics corp. ape 8935 typical performance characteristics (continued) condition: vbias= ven=5v, iout=6a, cin=1uf, cout=0.1uf, c h1: en, ch2:vout, ch 4 :i in fig. 7 waveform for t d - on , vin=1.05v fig. 8 waveform for t d - on , vin=1.5v fig. 9 waveform for t on and t r , vin= 1.05 v fig. 10 waveform for t on and t r , vin= 1.5 v fig. 11 waveform for t off and t f , vin= 1.05 v fig. 12 waveform for t off and t f , vin= 1 . 5 v
9 advanced power electronics corp. ape 8935 typical performance characteristics (continued) fig. 13 t on vs. vin fig. 14 t off vs. vin fig. 15 t r vs. vin fig. 16 t f vs. vin fig. 17 t d - on vs. vin fig. 18 r on vs. vin 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 t on (us) vin (v) vbias=3.3v vbias=5.0v cin=1uf, cout=0.1uf, rl=10 ? 0 1 2 3 4 5 6 7 8 9 10 0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 t off (us) vin (v) vbias=3.3v vbias=5.0v cin=1uf, cout=0.1uf, rl=10 ? 0 500 1000 1500 2000 2500 3000 3500 0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 t r (us) vin (v) vbias=3.3v vbias=5.0v cin=1uf, cout=0.1uf, rl=10 ? 0 1 2 3 4 5 6 7 8 9 10 0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 t f (us) vin (v) vbias=3.3v vbias=5.0v cin=1uf, cout=0.1uf, rl=10 ? 0 100 200 300 400 500 600 700 800 900 1000 1100 0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 t d - on (us) vin (v) vbias=3.3v vbias=5.0v cin=1uf, cout=0.1uf, rl=10 ? 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 0.8 1.4 2.0 2.6 3.2 3.8 4.4 5.0 r on (m ) vin (v) vbias=3.3v vbias=5.0v io=200ma
10 advanced power electronics corp. ape 8935 typical performance characteristics (continued) fig. 19 r on vs. temperature fig. 20 r on vs. temperature fig. 21 quiescent current vs. temperature fig. 22 shutdown current vs. temperature fig.23 en threshold vs. temperature 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 - 40 - 20 0 20 40 60 80 100 120 r ds - on (m ) t j ( c) vbias=vin=5v vbias=vin=3.3v vbias=5v, vin=1.05v io=200ma 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 - 40 - 20 0 20 40 60 80 r ds - on (m ) t a ( c) vbias=vin=5v vbias=vin=3.3v vbias=5v, vin=1.05v io=6a 0 5 10 15 20 25 30 35 40 45 50 - 40 - 20 0 20 40 60 80 100 120 i bias (ua) t j ( c) vin=vbias=5v vin=vbias=3.3v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 - 40 - 20 0 20 40 60 80 100 120 i sd (ua) t j ( c) vin=vbias=5v vin=vbias=3.3v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 40 - 20 0 20 40 60 80 v en (v) t j ( c) ven - h ven - l
11 advanced power electronics corp. ape 8935 application information on/off control the load switch is controlled by the en pin . the en pin is active high and has a low threshold making it capable of interfacing with low voltage signals. the en pin can be used with standard 1.5v, 1.8v, 2.5v or 3.3v gpio l ogic threshold. do not leave the en pin float. input capacitor an input capacitor is recommended to be placed between vin and gnd t o limit the voltage drop on the input supply during high current application . output capacitor setting a c in greater than the c out is highly recommended . since the internal body diode is in the n mos switch , this prevents the current flow s through the body diode from vout to vin when t he system supply is removed. layout considerations follow the below guidelines for pcb layout to achieve stable operation . t ake below figure for reference. 1. keep the high current paths ( vin, vout and gnd ) wide and short to obtain the best effect . 2. t he input and output capacitors should be close to the device as possible to minimize the parasitic trace inductances. 3. place the thermal vias under the exposed pad. this help for thermal diffusion away from the device. fig. 24 r eference layout
12 advanced power electronics corp. ape 8935 marking information d fn 3 x 3 - 8 l 8935 gn 3 ywwsss part number date code ( ywwsss ) y : year ww : week sss : sequence package code

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